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| BTS 630 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. * * * * * * * * * * * * Highside switch Overtemperatur protection Short circuit / overload protection through pulse widt reduction and overload shutdown Load dump protection Undervoltage and overvoltage shutdown with auto-restart and hysteresis Reverse battery protection 1) Timing frequency adjustable Controlled switching rise and fall times Maximum current internally limited Protection against loss of GND 2) Electrostatic discharge (ESD) protection Package: TO220/7 and TO220/7 E3128 (SMD), Pin 4 is shorted to the mounting flange 7 1 Standard Note: Switching frequency is programmed with an external capacitor. Type Ordering Code Marking Package BTS630 (Standard) BTS630 Maximum Ratings Q67060-S6305-A2 Q67060-S6305-A3 - TO220/7 TO220/7, E3230 Parameter Active overvoltage prodection Short circuit current Input current (DC) Pin1 (Ct) and pin19 (VC) Operating temperature range Storage temperature range Power dissipation Symbol Values >40 self-limited 2 2 -40...+150 -50...+150 75 1.67 75 Unit V mA mA EC Vbb (AZ) ISC ICt IVC Tj Tstg Ptot Rth JC Rth JA Ta=25C chip-ambient W K/W Thermal resistance chip-case 1) 2) With 150 resistor in signal GND connection. Potential between signal GND and load GND >0.5V Semiconductor Group 1 12.96 BTS 630 Block Diagram Over / UnderOvervoltage Prodtection voltage Detection Temperature Sensor (4) Vbb Timing Generator Pulse - width Comparator Pump and Logic Current Limiting Voltage Regulator (1) (5) (3) (2) (6) (7) GND Ct Timing Cap. Signal GND VREF VC CB Bootstrap Capacitor OUT Load GND Pin Configuration (top view) Pin Definitions and Funktions Pin 1 2 3 4 5 6 7 Symbol GND VC VREF Vbb Ct Funktions Ground Voltage for PWM-Control Reference Voltage Supply voltage Timing capacitor for frequency Bootstrap capacitor Output CB OUT 1234567 Semiconductor Group 2 BTS 630 Electrical Characteristics at Tj = 25 EC, unless otherwise specified.CBootstrap = 22nF Parameter On-state resistance IL=3A, Vbb=12V Operating voltage Tj = -40 ...+150EC Nominal current, calculated value ISO-standard:Vbb-VOUT 0.5V, Tc=85C Load current limit Vbb-VOUT> 1V Undervoltage shutdown IL = 3A Overvoltage shutdown IL = 3A Max.output voltage (RMS) IL = 3A, Vbb > 12 V Reference voltage IREF= 10mA Reference current pin 18 (GND) to pin 20 (VREF) short Internal current consumption during operation, measured in PWM gap Bootstrap voltage, pin 2 (CB1) to pin 3 (CB2) Vbb = 12 V, PWM frequency Tc = -40 ... +150 C, Ct = 68 nF Max. pulse duty factor IL = 3A, VC=0V , (50% VOUT) Min. pulse duty factor IL = 3A, VC=0V , (50% VOUT) Slew rate "on" 10 ... 90% IOUT Slew rate "off" 90 ... 10% IOUT Thermal overload trip temperature 1) Note: undervoltage shutdown 2) Note: overvoltage shutdown Symbol RON Vbb IL-ISO ILLim Vbb(LOW) Vbb(HI) VRMSmax VREF IREF IR VB fPWM Dimax Dimin du/dt(on) du/dt(off) Tj min. 5.9 5.8 3 17 12 2 50 95 20 20 150 1) Values typ. max. 70 16.9 20 4.2 18 5.4 19 14 3 150 5 10 98 8 14 120 120 100 2) Unit m V A A V V V V mA mA V Hz % % mV/s mV/s C Semiconductor Group 3 BTS 630 Circuits V Analog Logic-Input C (2) V REF VC GND (3) Voltage Regulator 2m A Pulse-width Comparator 6V max. 2mA (2) (1) Triangular Waveform Generator Input C t (5) V bb 6m A Ct GND (5) Timing Generator 6V max. 2mA (1) Voltage Sensor (typ) Undervoltage Sensor Overvoltage Sensor +V bb +V bb V bb < 4.2 V Signal to the logic unit V bb > 18 V Signal to the logic unit GND GND Semiconductor Group 4 BTS 630 Package Outline TO220/7 Dimensions in mm Package Outline TO220/7 E3230 Dimensions in mm Semiconductor Group 5 BTS 630 Application Note Dimming of dashboard lighting + 4 3 220nF V bb VREF V bb 25 k O 2 BTS630 VC GND 1 Ct 5 68nF CB 6 22nF OUT 7 150 O 150 O Resistor for reverse battery and load dump prodection Load Semiconductor Group 6 BTS 630 m 140 Typ.on-state resistance R ON= f (T C ) V 20,0 Typ. overvoltage shutdown V bb(HI) = f (T C ) 120 19,5 100 19,0 80 18,5 60 18,0 40 17,5 20 -50 -25 0 25 50 75 100 125 150 17,0 -50 -25 0 25 50 75 100 125 150 TC C TC C A 30 Typ. Load current limit I LLim = f (T C ) V 20,0 Typ. overvoltage shutdown V bb(HI) = f (T C ) 25 19,5 20 19,0 15 18,5 18,0 10 17,5 5 -50 -25 0 25 50 75 100 125 150 17,0 -50 -25 0 25 50 75 100 125 150 T C C TC C Semiconductor Group 7 BTS 630 % 15 14 13 12 11 10 9 8 7 6 5 -50 Typ. min. puls duty factor D im in = f (T C ) % 100 Typ. max. puls duty factor D im ax = f (T C ) 99 98 97 96 95 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TC C TC C Hz 100 Typ. PWM Frequency f PWM = f (T C ) V 14,0 Typ. max. output voltage V RMSm ax = f (T C ), Vbb > 12V 90 13,5 80 13,0 70 12,5 60 50 -50 -25 0 25 50 75 100 125 150 12,0 -50 -25 0 25 50 75 100 125 150 TC C TC C Semiconductor Group 8 |
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